dmn3042l document number: ds37539 rev. 2- 2 1 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max 30v 26.5m @ v gs = 10v 5.8a 32m @ v gs = 4.5v 5.0a description and applications this mosfet is designed to minimize the on-state re sistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power management applicat ions. ? battery charging ? power management functions ? dc-dc converters ? portable power adaptors features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) sot23 ordering information (note 4) part number case packaging dmn3042l-7 sot23 3,000/tape & reel DMN3042L-13 sot23 10,000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002 /95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http ?//www.diodes.com/products/packages.html. marking information sot23 date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun ju l aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic top view d g s 4l = product type marking code ym = date code marking y or y = year (ex: b = 2014) m = month (ex: 9 = september) d s g 4l ym
dmn3042l document number: ds37539 rev. 2- 2 2 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l maximum ratings (@t a = +25c unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 12 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 5.8 4.0 a maximum body diode forward current (note 6) i s 1.5 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 0.72 w thermal resistance, junction to ambient (note 5) st eady state r ja 171 c/w power dissipation (note 6) p d 1.4 w thermal resistance, junction to ambient (note 6) st eady state r ja 93 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.6 ? 1.4 v v ds = v gs , i d = 250a static drain-source on-resistance r ds (on) ? 21 26.5 m v gs = 10v, i d = 5.8a ? 23 32 v gs = 4.5v, i d = 5.0a ? 29 48 v gs = 2.5v, i d = 4.0a diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 1a dynamic characteristics (note 8 ) input capacitance c iss ? 570 860 pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 63 95 reverse transfer capacitance c rss ? 53 80 gate resistance r g ? 3.2 4.5 v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 10v) q g ? 13.3 20 nc v ds = 15v, i d = 6.9a total gate charge (v gs = 4.5v) q g ? 6.1 8 gate-source charge q gs ? 1.0 1.5 gate-drain charge q gd ? 1.6 2.5 turn-on delay time t d(on) ? 1.5 2.4 ns v gs = 10v, v dd = 15v, r g = 3 , i d = 6.9a turn-on rise time t r ? 3.3 5 turn-off delay time t d(off) ? 13.9 22 turn-off fall time t f ? 4.9 7 body diode reverse recovery time t rr ? 7.8 12 ns i s = 5a, di/dt = 100a/ s body diode reverse recovery charge q rr ? 1.9 3 nc i s = 5a, di/dt = 100a/ s notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1inch squ are copper plate. 7. short duration pulse test used to minimize self- heating effect. 8. guaranteed by design. not subject to product tes ting.
dmn3042l document number: ds37539 rev. 2- 2 3 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l v , drain-source voltage (v) ds figure 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d v = 2.0v gs 0 5 10 15 20 25 30 0 1 2 3 4 5 v = 2.5v gs v = 1.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 10.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5.0v ds i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0.018 0.02 0.022 0.024 0.026 0.028 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.04 0.08 0.12 0.16 0.2 0 2 4 6 8 10 12 i = 5.8a d i = 5.0a d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 12 14 16 18 20 v = 10v gs t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e ds(on) on-resis tance (normali ze d) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 2.5v gs i = 4.0a d v = 10v gs i = 5.8a d v = 4.5v gs i = 5.0a d
dmn3042l document number: ds37539 rev. 2- 2 4 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l t , junction temperature ( c) j figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(o n) 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 v = 10v gs i = 5.8a d v = 4.5v gs i = 5.0a d v = 2.5v gs i = 10a d t , junction temperature ( c) j figure 8 gate threshold variation vs. ambient tempe rature v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th ) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 4 8 12 16 20 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c rss c oss c iss q , total gate charge (nc) g figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) gs 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v = 15v ds i = 6.9a d v , drain-source voltage (v) ds figure 12 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 15 0c j (max) t = 25 c a v = 1 0v gs sing le pulse dut on 1 * mrp board
dmn3042l document number: ds37539 rev. 2- 2 5 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l t1, pulse duration time (sec) figure 13 transient thermal resistance r(t), transient thermal resistance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.9 d = 0.7 d = 0.5 r (t) = r(t) * r thja thja r = 168c/w thja duty cycle, d = t1/ t2 package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l 1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 8 all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a
dmn3042l document number: ds37539 rev. 2- 2 6 of 6 www.diodes.com january 2015 ? diodes incorporated dm n3042 l important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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